* Please refer to the English Version as our Official Version.
Image |
Part Number |
Manufacturer |
Description |
Package |
Stock |
Quantity |
Package |
Series |
FET Type |
Technology |
Drain to Source Voltage (Vdss) |
Current - Continuous Drain (Id) @ 25°C |
Drive Voltage (Max Rds On, Min Rds On) |
Vgs(th) (Max) @ Id |
Gate Charge (Qg) (Max) @ Vgs |
Input Capacitance (Ciss) (Max) @ Vds |
Vgs (Max) |
FET Feature |
Power Dissipation (Max) |
Rds On (Max) @ Id, Vgs |
Operating Temperature |
Mounting Type |
Supplier Device Package |
Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH 400V SMD1
|
Package: TO-267AB |
Stock7,424 |
|
TO-267AB |
- |
N-Channel |
MOSFET (Metal Oxide) |
400V |
14A (Tc) |
10V |
4V @ 250µA |
110nC @ 10V |
- |
±20V |
- |
4W (Ta), 150W (Tc) |
315 mOhm @ 9A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-267AB |
TO-267AB |
||
Microsemi Corporation |
MOSFET N-CH 500V TO-254AA
|
Package: TO-254-3, TO-254AA (Straight Leads) |
Stock2,048 |
|
TO-254-3, TO-254AA (Straight Leads) |
- |
N-Channel |
MOSFET (Metal Oxide) |
500V |
12A (Tc) |
10V |
4V @ 250µA |
120nC @ 10V |
- |
±20V |
- |
4W (Ta), 150W (Tc) |
415 mOhm @ 8A, 10V |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-254AA |
TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET N-CH 500V SMD1
|
Package: TO-267AB |
Stock6,480 |
|
TO-267AB |
- |
N-Channel |
MOSFET (Metal Oxide) |
500V |
12A (Tc) |
10V |
4V @ 250µA |
120nC @ 10V |
- |
±20V |
- |
4W (Ta), 150W (Tc) |
415 mOhm @ 8A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-267AB |
TO-267AB |
||
Microsemi Corporation |
MOSFET P-CH 100V TO-254AA
|
Package: TO-254-3, TO-254AA (Straight Leads) |
Stock5,872 |
|
TO-254-3, TO-254AA (Straight Leads) |
- |
P-Channel |
MOSFET (Metal Oxide) |
100V |
18A (Tc) |
10V |
4V @ 250µA |
60nC @ 10V |
- |
±20V |
- |
4W (Ta), 125W (Tc) |
200 mOhm @ 11A, 10V |
-55°C ~ 150°C (TJ) |
Through Hole |
TO-254AA |
TO-254-3, TO-254AA (Straight Leads) |
||
Microsemi Corporation |
MOSFET P-CH 100V SMD1
|
Package: TO-267AB |
Stock7,984 |
|
TO-267AB |
- |
P-Channel |
MOSFET (Metal Oxide) |
100V |
18A (Tc) |
10V |
4V @ 250µA |
60nC @ 10V |
- |
±20V |
- |
4W (Ta), 125W (Tc) |
200 mOhm @ 11A, 10V |
-55°C ~ 150°C (TJ) |
Surface Mount |
TO-267AB |
TO-267AB |
||
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257
|
Package: TO-257-3 |
Stock4,944 |
|
TO-257-3 |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
4A (Tc) (165°C) |
- |
- |
- |
324pF @ 35V |
- |
- |
47W (Tc) |
415 mOhm @ 4A |
-55°C ~ 225°C (TJ) |
Through Hole |
TO-257 |
TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO276
|
Package: TO-276AA |
Stock6,816 |
|
TO-276AA |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
4A (Tc) (165°C) |
- |
- |
- |
324pF @ 35V |
- |
- |
125W (Tc) |
415 mOhm @ 4A |
-55°C ~ 225°C (TJ) |
Surface Mount |
TO-276 |
TO-276AA |
||
GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257
|
Package: TO-257-3 |
Stock3,536 |
|
TO-257-3 |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
7A (Tc) (165°C) |
- |
- |
- |
720pF @ 35V |
- |
- |
80W (Tc) |
170 mOhm @ 7A |
-55°C ~ 225°C (TJ) |
Through Hole |
TO-257 |
TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276
|
Package: TO-276AA |
Stock5,328 |
|
TO-276AA |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
8A (Tc) (158°C) |
- |
- |
- |
720pF @ 35V |
- |
- |
200W (Tc) |
170 mOhm @ 8A |
-55°C ~ 225°C (TJ) |
Surface Mount |
TO-276 |
TO-276AA |
||
GeneSiC Semiconductor |
TRANS SJT 650V 15A TO-257
|
Package: TO-257-3 |
Stock2,736 |
|
TO-257-3 |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
15A (Tc) (155°C) |
- |
- |
- |
1534pF @ 35V |
- |
- |
172W (Tc) |
105 mOhm @ 15A |
-55°C ~ 225°C (TJ) |
Through Hole |
TO-257 |
TO-257-3 |
||
GeneSiC Semiconductor |
TRANS SJT 650V 16A TO276
|
Package: TO-276AA |
Stock2,368 |
|
TO-276AA |
- |
- |
SiC (Silicon Carbide Junction Transistor) |
650V |
16A (Tc) (155°C) |
- |
- |
- |
1534pF @ 35V |
- |
- |
330W (Tc) |
105 mOhm @ 16A |
-55°C ~ 225°C (TJ) |
Surface Mount |
TO-276 |
TO-276AA |
||
Panasonic Electronic Components |
MOSFET P-CH 30V .1A S-MINI-3P
|
Package: SC-70, SOT-323 |
Stock331,440 |
|
SC-70, SOT-323 |
- |
P-Channel |
MOSFET (Metal Oxide) |
30V |
100mA (Ta) |
5V |
2V @ 1µA |
- |
- |
±20V |
- |
150mW (Ta) |
75 Ohm @ 10mA, 5V |
150°C (TJ) |
Surface Mount |
SMini3-G1 |
SC-70, SOT-323 |
||
Panasonic Electronic Components |
MOSFET P-CH 30V .1A SMINI-3
|
Package: SC-85 |
Stock36,000 |
|
SC-85 |
- |
P-Channel |
MOSFET (Metal Oxide) |
30V |
100mA (Ta) |
5V |
2V @ 1µA |
- |
- |
±20V |
- |
150mW (Ta) |
75 Ohm @ 10mA, 5V |
150°C (TJ) |
Surface Mount |
SMini3-F2 |
SC-85 |
||
Panasonic Electronic Components |
MOSFET P-CH 200V 2A U-G2
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,736 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
- |
P-Channel |
MOSFET (Metal Oxide) |
200V |
2A (Tc) |
10V |
4V @ 1mA |
- |
400pF @ 20V |
±20V |
- |
1W (Ta), 10W (Tc) |
2 Ohm @ 1A, 10V |
150°C (TJ) |
Surface Mount |
U-G2 |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Panasonic Electronic Components |
MOSFET P-CH 30V 100MA SSSMINI-3
|
Package: SOT-723 |
Stock5,824 |
|
SOT-723 |
- |
P-Channel |
MOSFET (Metal Oxide) |
30V |
100mA (Ta) |
2.5V, 4V |
1.5V @ 1µA |
- |
12pF @ 3V |
±12V |
- |
100mW (Ta) |
18 Ohm @ 10mA, 4V |
125°C (TJ) |
Surface Mount |
SSSMini3-F1 |
SOT-723 |
||
Panasonic Electronic Components |
MOSFET P-CH 30V .1A SSSMINI-3
|
Package: SOT-723 |
Stock3,296 |
|
SOT-723 |
- |
P-Channel |
MOSFET (Metal Oxide) |
30V |
100mA (Ta) |
2.5V, 4V |
1.5V @ 1µA |
- |
12pF @ 3V |
±12V |
- |
100mW (Ta) |
18 Ohm @ 10mA, 4V |
125°C (TJ) |
Surface Mount |
SSSMini3-F2 |
SOT-723 |
||
Renesas Electronics America |
MOSFET P-CH 160V 7A TO-3P
|
Package: TO-3P-3, SC-65-3 |
Stock3,536 |
|
TO-3P-3, SC-65-3 |
- |
P-Channel |
MOSFET (Metal Oxide) |
160V |
7A (Ta) |
10V |
- |
- |
900pF @ 10V |
±15V |
- |
100W (Tc) |
- |
150°C (TJ) |
Through Hole |
TO-3P |
TO-3P-3, SC-65-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 0.2A S-MINI
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock21,612 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
P-Channel |
MOSFET (Metal Oxide) |
60V |
200mA (Ta) |
10V |
- |
- |
85pF @ 10V |
±20V |
- |
200mW (Ta) |
2 Ohm @ 50mA, 10V |
150°C (TJ) |
Surface Mount |
SC-59 |
TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 14A TO220NIS
|
Package: TO-220-3 Full Pack |
Stock6,992 |
|
TO-220-3 Full Pack |
- |
P-Channel |
MOSFET (Metal Oxide) |
60V |
14A (Ta) |
4V, 10V |
2V @ 1mA |
45nC @ 10V |
1200pF @ 10V |
±20V |
- |
40W (Tc) |
120 mOhm @ 7A, 10V |
150°C (TJ) |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.2A S-MINI
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock6,256 |
|
TO-236-3, SC-59, SOT-23-3 |
- |
P-Channel |
MOSFET (Metal Oxide) |
30V |
200mA (Ta) |
2.5V |
- |
- |
92pF @ 3V |
±20V |
- |
200mW (Ta) |
4 Ohm @ 50mA, 2.5V |
150°C (TJ) |
Surface Mount |
SC-59 |
TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
|
Package: TO-243AA |
Stock7,328 |
|
TO-243AA |
- |
P-Channel |
MOSFET (Metal Oxide) |
60V |
1A (Ta) |
4V, 10V |
2V @ 1mA |
6.5nC @ 10V |
155pF @ 10V |
±20V |
- |
500mW (Ta) |
730 mOhm @ 500mA, 10V |
150°C (TJ) |
Surface Mount |
PW-MINI |
TO-243AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 1A SC-62
|
Package: TO-243AA |
Stock21,480 |
|
TO-243AA |
- |
P-Channel |
MOSFET (Metal Oxide) |
60V |
1A (Ta) |
4V, 10V |
2V @ 1mA |
6.5nC @ 10V |
155pF @ 10V |
±20V |
- |
500mW (Ta) |
730 mOhm @ 500mA, 10V |
150°C (TJ) |
Surface Mount |
PW-MINI |
TO-243AA |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,928 |
|
TO-252-3, DPak (2 Leads + Tab), SC-63 |
- |
P-Channel |
MOSFET (Metal Oxide) |
60V |
5A (Ta) |
4V, 10V |
2V @ 1mA |
22nC @ 10V |
630pF @ 10V |
±20V |
- |
20W (Tc) |
190 mOhm @ 2.5A, 10V |
150°C (TJ) |
Surface Mount |
PW-MOLD |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 100V 12A TO220NIS
|
Package: TO-220-3 Full Pack |
Stock3,360 |
|
TO-220-3 Full Pack |
- |
P-Channel |
MOSFET (Metal Oxide) |
100V |
12A (Ta) |
4V, 10V |
2V @ 1mA |
48nC @ 10V |
1100pF @ 10V |
±20V |
- |
35W (Tc) |
210 mOhm @ 6A, 10V |
150°C (TJ) |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock3,792 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock3,488 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock5,488 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock3,680 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock2,048 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH
|
Package: TO-220-3 Full Pack |
Stock6,752 |
|
TO-220-3 Full Pack |
* |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
- |
Through Hole |
TO-220NIS |
TO-220-3 Full Pack |